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| Publications [#218028] of Henry Everitt
search www.researchgate.net.Papers Published
- {\"O}zg{\"u}r, {\"U}mit and Everitt, Henry O, Ultrafast carrier relaxation in GaN, In_(0.05)Ga_(0.95)N and an In_(0.05)Ga_(0.95)/In_(0.15)Ga_(0.85)N Multiple Quantum Well,
arXiv, vol. cond-mat.mes-hall
(January, 2002) [0210214v1]
(last updated on 2014/02/08)
Abstract: Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxation dynamics were investigated as a function of excitation wavelength and intensity. Spectrally-resolved sub-picosecond relaxation due to carrier redistribution and QW capture was found to depend sensitively on the wavelength of pump excitation. Moreover, for pump intensities above a threshold of 100 microJ/cm2, all samples demonstrated an additional emission feature arising from stimulated emission (SE). SE is evidenced as accelerated relaxation (< 10 ps) in the pump-probe data, fundamentally altering the re-distribution of carriers. Once SE and carrier redistribution is completed, a slower relaxation of up to 1 ns for GaN and InGaN epilayers, and 660 ps for the MQW sample, indicates carrier recombination through spontaneous emission.
Keywords: cond-mat.mes-hall, cond-mat.mtrl-sci
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