Publications [#314113] of Henry Everitt

Papers Published

1. Reynolds, JG; Reynolds, CL; Mohanta, A; Muth, JF; Rowe, JE; Everitt, HO; Aspnes, DE, Shallow acceptor complexes in p-type ZnO, Applied Physics Letters, vol. 102 no. 15 (April, 2013), pp. 152114-152114, AIP Publishing, ISSN 0003-6951 [Gateway.cgi], [doi]
   (last updated on 2025/11/07)

   Abstract:
   We show that N-doped ZnO films grown on sapphire can exhibit significant (∼10¹⁸ cm^-3) room-temperature p-type behavior when sufficient nitrogen (N) is incorporated and the material is annealed appropriately. Substitutional N on the oxygen (O) sublattice is a deep acceptor; however, shallow acceptor complexes involve N, H, and zinc vacancies (V Zn). Combining secondary ion mass spectrometry, Raman-scattering, photoluminescence, and Hall-effect data, we establish the evolution of N from its initial incorporation on a Zn site to a final shallow acceptor complex VZn^-NO^-H with an ionization energy of ca. 130 meV. This complex is responsible for the observed p-type behavior. © 2013 AIP Publishing LLC.