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| Publications [#314127] of Henry Everitt
search www.researchgate.net.Papers Published
- Glinka, YD; Shahbazyan, TV; Everitt, HO; Roberts, J; Rajagopal, P; Cook, J; Piner, E; Linthicum, K, Effect of the surface states on photoluminescence from surface GaN/Al 0.2Ga0.8N quantum wells,
Epl, vol. 87 no. 4
(August, 2009),
pp. 47007-47007, IOP Publishing, ISSN 0295-5075 [Gateway.cgi], [doi]
(last updated on 2025/11/07)
Abstract: We report on photoluminescence (PL) measurements at 85 K for GaN/Al 0.2Ga0.8N surface quantum wells (SQWs) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QWs of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The PL hence originates from the recombination of surface-acceptor-bound (A0sXA) excitons. Two types of acceptors were identified. © 2009 Europhysics Letters Association.
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