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| Publications [#314135] of Henry Everitt
search www.researchgate.net.Papers Published
- Choi, S; Kim, TH; Everitt, HO; Brown, A; Losurdo, M; Bruno, G; Moto, A, Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces,
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures, vol. 25 no. 3
(June, 2007),
pp. 969-973, American Vacuum Society, ISSN 1071-1023 [GetabsServlet], [doi]
(last updated on 2025/11/07)
Abstract: Spectroscopic ellipsometry installed on a GEN-II plasma assisted molecular beam epitaxy machine has been shown to be an effective in situ real time tool for monitoring the kinetics of gallium adlayer adsorption/desorption on the GaN surface. In this work, the authors present data on the study of Ga adsorption/desorption on polar c -plane GaN (0001) and nonpolar m -plane GaN (1-100) surfaces for Ga beam equivalent pressures in the range of 8.96× 10-8 -1.86× 10-7 Torr, Ga pulses in the range of 5-360 s, and for substrate temperatures between 650 and 750 °C. © 2007 American Vacuum Society.
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