Publications [#318435] of Henry Everitt

Papers Published

1. Özgür, Ü; Everitt, HO, Ultrafast carrier relaxation in GaN, (formula presented) and an (formula presented) multiple quantum well, Physical Review B Condensed Matter and Materials Physics, vol. 67 no. 15 (April, 2003), American Physical Society (APS) [doi]
   (last updated on 2025/11/07)

   Abstract:
   Room-temperature, wavelength-nondegenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well (QW) structure. Carrier relaxation dynamics were investigated as a function of excitation wavelength and intensity. Spectrally resolved sub-picosecond relaxation due to carrier redistribution and QW capture was found to depend sensitively on the wavelength of pump excitation. Moreover, for pump intensities above a threshold of (formula presented) all samples demonstrated an additional emission feature arising from stimulated emission (SE). SE is evidenced as accelerated relaxation (formula presented) in the pump-probe data, fundamentally altering the redistribution of carriers. Once SE and carrier redistribution is completed, a slower relaxation of up to 1 ns for GaN and InGaN epilayers, and 660 ps for the multiple QW sample, indicates carrier recombination through spontaneous emission. © 2003 The American Physical Society.