Publications [#331975] of Henry Everitt

Papers Published

1. Kong, W; Roberts, AT; Jiao, WY; Fournelle, J; Kim, TH; Losurdo, M; Everitt, HO; Brown, AS, Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy, Applied Physics Letters, vol. 107 no. 13 (September, 2015), pp. 132102-132102, AIP Publishing [doi]
   (last updated on 2025/11/07)

   Abstract:
   Thin films of the wide bandgap quaternary semiconductor InxAlyGa(1-x-y)N with low In (x=0.01-0.05) and high Al composition (y=0.40-0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280nm-320nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.