Publications [#331997] of Henry Everitt

Papers Published

1. Neogi, A; Everitt, HO; Morkoç, H; Kuroda, T; Tackeuchi, A, Effects of strain on carrier recombination in GaN quantum dots, Conference on Quantum Electronics and Laser Science QELS Technical Digest Series, vol. 89 (December, 2003), pp. QWA16/2
   (last updated on 2025/11/07)

   Abstract:
   Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.