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| Publications [#245125] of Harold U. Baranger
Papers Published
- Stanton, CJ; Baranger, HU; Wilkins, JW, Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductors,
Applied Physics Letters, vol. 49 no. 3
(December, 1986),
pp. 176-178, AIP Publishing, ISSN 0003-6951 [doi]
(last updated on 2026/01/15)
Abstract: We present results for the negative differential mobility and the distribution function in GaAs and InP for electric fields less than 40 kV/cm based on the analytic solution of the Boltzmann equation for a model with two valleys and three relaxation times. Using the measured low field mobility, lower valley mass, and valley separation energy Δ while adjusting three upper valley parameters, we obtain good agreement with the experimental velocity-field curves. The distribution function in the lower valley shows structure at energies ≊Δ due to the intervalley scattering.
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