Publications [#245185] of Harold U. Baranger

Papers Published

1. Baranger, HU; Wilkins, JW, Ballistic electrons in an inhomogeneous submicron structure: Thermal and contact effects, Physical Review B, vol. 30 no. 12 (January, 1984), pp. 7349-7351, American Physical Society (APS), ISSN 0163-1829 [p7349], [doi]
   (last updated on 2026/01/15)

   Abstract:
   For a simple submicron semiconductor structure we have calculated exactly the electron distribution f(v,x) within a relaxation-to-local-equilibrium assumption for the collision term of the Boltzmann equation. This is the first calculation of the electron distribution in an inhomogeneous semiconductor. Large applied voltages produce a substantial ballistic peak in f(v,x). But at all voltages contact inhomogeneities and local heating (and cooling) produce an I-V characteristic only weakly dependent on the scattering rate. © 1984 The American Physical Society.

   Keywords:
   SEMICONDUCTOR MATERIALS; TRANSPORT THEORY; ELECTRON SPECTRA; MICROSTRUCTURE; DIFFUSION; ELECTRIC CONTACTS; DEBYE LENGTH; BOLTZMANN EQUATION; TEMPERATURE EFFECTS