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| Publications [#60732] of Martin A. Brooke
search ieeexplore.ieee.org.Papers Published
- Bond, Steven W. and Vendier, Olivier and Lee, Myunghee and Jung, Sungyong and Vrazel, Michael and Lopez-Lagunas, Abelardo and Chai, Sek and Dagnall, Georgianna and Brooke, Martin and Jokerst, Nan Marie and Wills, D. Scott and Brown, April, Three-layer 3-D silicon system using through-Si vertical optical interconnections and Si CMOS hybrid building blocks,
IEEE Journal on Selected Topics in Quantum Electronics, vol. 5 no. 2
(1999),
pp. 276 - 286 [2944.778306]
(last updated on 2007/04/11)
Abstract: We present for the first time a three-dimensional (3-D) Si CMOS interconnection system consisting of three layers of optically interconnected hybrid integrated Si CMOS transceivers. The transceivers were fabricated using 0.8-µm digital Si CMOS foundry circuits and were integrated with long wavelength InP-based emitters and detectors for through-Si vertical optical interconnections. The optical transmitter operated with a digital input and optical output with operation speeds up to 155 Mb/s. The optical receiver operated with an external optical input and a digital output up to 155 Mb/s. The transceivers were stacked to form 3-D through-Si vertical optical interconnections and a fabricated three-layer stack demonstrated optical interconnections between the three layers with operational speed of 1 Mb/s and bit-error rate of 10-9.
Keywords: Integrated optoelectronics;CMOS integrated circuits;Semiconducting silicon;Semiconducting indium phosphide;Bit error rate;
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