Publications [#67578] of Richard B. Fair

Papers Published

1. Fair, R.B. and Tsai, J.C.C., Profile parameters of implanted-diffused arsenic layers in silicon, J. Electrochem. Soc. (USA), vol. 123 no. 4 (1976), pp. 583 - 6
   (last updated on 2007/04/17)

   Abstract:
   Equations have been derived that describe the important profile variables that are required to characterize the diffusion of As implanted layers for which the surface concentration is greater than ~1×10¹⁹ cm^-3. In addition, data obtained from differential conductivity profile measurements and SIMS profile measurements (Fair and Tsai, ibid., vol.122, p.1689 (1975)) have been used to obtain experimental parameters for these equations

   Keywords:
   arsenic;diffusion in solids;elemental semiconductors;ion implantation;semiconductor doping;silicon;