Publications [#67587] of Richard B. Fair

Papers Published

1. Fair, R.B., The role of vacancies and self-interstitials in impurity diffusion in silicon, Diffus. Defect Data (Switzerland), vol. 37 (1984), pp. 1 - 24
   (last updated on 2007/04/17)

   Abstract:
   Research in the areas of self-diffusion and dopant diffusion in Si has focused on the identification of the specific mechanisms and point defects involved. Recent approaches include the observation of the effects of diffusion and doping on stacking fault growth or shrinkage, enhanced or retarded diffusion of one dopant in the presence of another, and computer modelling. Very few of these studies have yielded unambiguous interpretations, due to the indirect nature of the investigations. However, it is now widely believed that both vacancies and Si self-interstitials play a role in diffusion processes, either directly or indirectly through bimolecular reactions with each other

   Keywords:
   diffusion in solids;elemental semiconductors;impurity-defect interactions;impurity-vacancy interactions;interstitials;silicon;