Publications [#67588] of Richard B. Fair

Papers Published

1. Fair, R.B., Quantitative theory of retarded base diffusion in silicon n-p-n structures with arsenic emitters, J. Appl. Phys. (USA), vol. 44 no. 1 (1973), pp. 283 - 91
   (last updated on 2007/04/17)

   Abstract:
   When As is sequentially diffused into Ga or B-doped Si, a retardation of the p-type base layer is generally observed. This is in contrast to the `emitter-push' effect associated with sequential phosphorus diffusions. In order to simulate transistor profiles it is necessary to be able to quantitatively describe the emitter-base interactions during diffusion. The way in which the internal electric field the equilibrium vacancy density, ion pairing, and the rate of [V_SiAS₂] complex formation affect the redistribution of the base layer during sequential processing was investigated

   Keywords:
   arsenic;bipolar transistors;diffusion in solids;semiconductor doping;silicon;