Publications [#67602] of Richard B. Fair

Papers Published

1. Fair, R.B., Concentration profiles of diffused dopants in silicon (1981), pp. 315 - 442
   (last updated on 2007/04/17)

   Abstract:
   A review of some of the experimental techniques for measuring total and electrically active dopant concentration profiles in silicon is presented. These profiles offer an important clue to the high temperature diffusion mechanisms. Then, the concept of the multiple-charge-state vacancy model is developed to explain silicon self-diffusion and single and multiple dopant diffusions. Wherever appropriate, alternative diffusion models are briefly described. The author also discusses concentration profiles of diffused dopants in silicon, and process-induced profile changes

   Keywords:
   diffusion in solids;doping profiles;elemental semiconductors;reviews;self-diffusion in solids;silicon;