Publications [#67606] of Richard B. Fair

Papers Published

1. Fair, R.B., Cooperative effects between arsenic and boron in silicon during simultaneous diffusions from ion implanted and chemical source predepositions, Solid-State Electron. (UK), vol. 17 no. 1 (1974), pp. 17 - 24
   (last updated on 2007/04/17)

   Abstract:
   Simultaneous diffusions of As and B from predeposited layers (chemical source or ion implantation) have been used in order to fabricate the emitter and base regions, respectively, of microwave transistors. Mathematical simulations of the doping profiles in these transistors have shown that the cooperative diffusion effects that occur in sequentially diffused As-B structures (chemical sources) are noticeably absent in the predeposited-diffused structures. The result is that transistors that are fabricated via this technique show no base retardation, and the active base doping concentrations are higher than predicted by previously established diffusion equations. In order to determine the extent to which cooperative effects are important, transistor doping profiles were measured and compared with calculated profiles

   Keywords:
   arsenic;bipolar transistors;boron;diffusion in solids;elemental semiconductors;semiconductor device manufacture;semiconductor doping;silicon;solid-state microwave devices;