Publications [#67613] of Richard B. Fair

Papers Published

1. Fair, R.B., Observation of vacancies and self-interstitials in diffusion experiments in silicon, Thirteenth International Conference on Defects in Semiconductors (1985), pp. 173 - 85, Coronado, CA, USA
   (last updated on 2007/04/17)

   Abstract:
   Silicon self-interstitials and vacancies are known to influence atomic diffusion in silicon. While the dual mechanism has been established, little agreement exists on what the relative contributions of vacancies and self-interstitials are to diffusion. Recent experiments in which multiple observations are made involving both diffusion and defect growth or shrinkage etc., are reviewed. Through such experiments where the dominance of one type of point defect over the other is clear, one can begin to develop reliable models and understand the important experimental conditions and parameters which must be controlled to generate unambiguous data

   Keywords:
   diffusion in solids;elemental semiconductors;interstitials;silicon;vacancies (crystal);