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| Publications [#67616] of Richard B. Fair
Papers Published
- Fair, R.B., Explanation of anomalous base regions in transistors,
Appl. Phys. Lett. (USA), vol. 22 no. 4
(1973),
pp. 186 - 7
(last updated on 2007/04/17)
Abstract: The recent experimental results of Ziegler, Cole, and Baglin (1972) showed that in sequentially diffused boron-arsenic npn silicon transistors, an unexplained depletion of boron occurs near the emitter-base junction. This depletion effect could have an appreciable influence on transistor characteristics. A quantitative explanation is shown to exist, based upon the retarded base diffusion theory of Fair (1973). The full-profile experimental- results of Ziegler et al. are shown to be accurately described by solutions to the coupled As-B diffusion equations when the junction electric field effect and the vacancy undersaturation condition created by VSiAs2 complex formation are taken into account
Keywords: bipolar transistors;
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