Publications [#67618] of Richard B. Fair

Papers Published

1. Fair, Richard B., QUANTITATIVE THEORY OF RETARDED BASE DIFFUSION IN SILICON n-p-n STRUCTURES WITH ARSENIC EMITTERS., Journal of Applied Physics, vol. 44 no. 1 (1973), pp. 283 - 291 [1.1661875]
   (last updated on 2007/04/17)

   Abstract:
   When As is sequentially diffused into Ga or B-doped Si, a retardation of the p-type base layer is generally observed. In this study, the way in which the internal electric field, the equilibrium vacancy density, ion pairing, and the rate of left bracket V//S//iAs//2 right bracket complex formation affect the redistribution of the base layer during sequential processing was investigated. It is found that the formation of these complexes causes a vacancy undersaturation in the Si to a distance in the crystal well beyond most practical collector-base junction depths. This extrinsic vacancy undersaturation effect causes the expected retarded base diffusion. Experimental verification of the correctness of the theory is given.

   Keywords:
   SEMICONDUCTOR DEVICES;