Publications [#67632] of Richard B. Fair

Papers Published

1. Fair, R.B., Impurity concentration doping effects on impurity diffusion in silicon, SEMICON/EUROPA 1983. Semiconductor Processing and Equipment Symposium (1983), pp. 230 - 7, Zurich, Switzerland
   (last updated on 2007/04/17)

   Abstract:
   Each type of doping impurity used in silicon pn junction formation exhibits its own special diffusion characteristics. The key to understanding these characteristics is knowing the way in which the impurities interact with point defects (vacancies and silicon self-interstitials). Vacancies in silicon can exist in several charge states, and the concentration-dependence of impurity diffusion depends on the energetics of impurity-ionized vacancy interactions. On the other hand, silicon self-interstitial atoms may also contribute to impurity diffusion, depending upon how easy it is to remove a substitutional dopant atom to make it an interstitial atom. This process can occur if a silicon self-interstitial atom displaces a dopant atom so that the silicon atom returns to a normal lattice site. Mixed modes of impurity diffusion often occur during silicon oxidation when both vacancies and self-interstitials are present in the silicon. These point defects also can interact with each other (recombine) in an attempt to achieve an equilibrium balance in the crystal

   Keywords:
   diffusion in solids;elemental semiconductors;impurity distribution;impurity-defect interactions;impurity-vacancy interactions;interstitials;silicon;