Publications [#67643] of Richard B. Fair

Papers Published

1. Fair, R.B., Boron penetration of thin polysilicon gates/ultrathin gate dielectrics from B⁺ implantation and thermal processing, Proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. ULSI Science and Technology 1997 (1997), pp. 247 - 61, Montreal, Que., Canada
   (last updated on 2007/04/17)

   Abstract:
   We discuss the situation when B⁺ implants (10-15 keV) are performed in thin polysilicon (less than 250 nm) gates, whereby the channeled B penetrates the gate dielectric and the Si substrate, thus loading up the gate dielectric with B in addition to doping the substrate. Experimental results and simulation show that regardless of whether the gate dielectric is pure SiO₂ or oxynitride, during subsequent annealing, the doped gate oxide unloads a portion of its implanted B, causing further channel doping to occur. For BF₂ implants, we have identified a new mechanism whereby B penetration through oxynitrides into Si is reduced because of the suppression of concentration-dependent B diffusion in Si by the presence of N

   Keywords:
   annealing;boron;dielectric thin films;diffusion;doping profiles;integrated circuit technology;integrated circuit testing;ion implantation;MOS integrated circuits;semiconductor process modelling;