Publications [#67649] of Richard B. Fair

Papers Published

1. Fair, R.B., Correction of calculated vacancy diffusion length at 1000°C in silicon, J. Appl. Phys. (USA), vol. 44 no. 8 (1973), pp. 3794 - 5
   (last updated on 2007/04/17)

   Abstract:
   In attempting to calculate the anomalous transistor profiles published by Ziegler, Cole, and Baglin (see abstr. A71504 and B36258 of 1972) it was necessary to assume the shape of the initial B profile. A complementary error function distribution was used, based upon their published junction depth and sheet resistance measurements. However, subsequent measurements of the initial B profile (unpublished results provided by Ziegler) showed that it did not have a complementary error function shape. In this paper, the calculations are repeated using the corrected initial B profile

   Keywords:
   bipolar transistors;boron;crystal impurities;diffusion in solids;elemental semiconductors;semiconductor doping;silicon;vacancies (crystal);