Publications [#67660] of Richard B. Fair

Papers Published

1. Fair, R.B., Analysis of phosphorus-diffused layers in silicon, J. Electrochem. Soc. (USA), vol. 125 no. 2 (1978), pp. 323 - 7
   (last updated on 2007/04/17)

   Abstract:
   Using the Fair-Tsai model of P diffusion in Si, equations have been derived which relate the total P concentration, electron concentration, sheet resistance, and junction depth of a P-diffused layer. Curves are presented which show surface concentration as a function of the R_s.x_J product, percentage of electrically active P as a function of surface concentration, and R_s vs. x_J for P-implant doses ranging from 1×10¹⁴ to 5×10¹⁶ cm^-2

   Keywords:
   diffusion in solids;elemental semiconductors;ion implantation;phosphorus;semiconductor doping;silicon;