Publications [#67664] of Richard B. Fair

Papers Published

1. Fair, Richard B. and Weber, Gary R., RELATIONSHIP BETWEEN RESISTIVITY AND TOTAL ARSENIC CONCENTRATION IN HEAVILY DOPED n- AND p-TYPE SILICON., Journal of Applied Physics, vol. 44 no. 1 (1973), pp. 280 - 282 [1.1661874]
   (last updated on 2007/04/17)

   Abstract:
   It has been observed that considerable discrepancy occurs between total As in Si diffusion profiles obtained by Irvin's curve in a preceding paper and those determined by neutron-activation analysis. Under conditions of equilibrium between As** plus ions and left bracket V//S//iAs//2 right bracket cojplexes, it is possible to derive the relationship between total As, C// tau , and bulk resistivity, rho , by using Irvin's curve as a standard. It is shown that a single C// tau -vs- rho curve is not sufficient because of the temperature and initial Si substrate dopant dependence of left bracket V//S//iAs//2 right bracket complex formation. Equilibrated near-Si-surface As data obtained by activation analysis and resistivity measurements are presented to verify the theoThe important result of this study is that it is now possible to determine partially the As C// tau (x) diffusion profile from four-point probe measurements and anodic sectioning of the Si.

   Keywords:
   SEMICONDUCTING SILICON;