Publications [#67665] of Richard B. Fair

Papers Published

1. Fair, R.B., A historical view of the role of ion-implantation defects in PN junction formation for devices, Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions II. Symposium (Materials Research Society Proceedings Vol.610) (2001), pp. 4 - 1, San Francisco, CA, USA
   (last updated on 2007/04/17)

   Abstract:
   The early use of ion bombardment of semiconductors for forming doped regions was viewed as a room temperature process by solid state scientists. Many interesting, but relatively useless devices were made by implanting species such as Na and Cs ions to form pn junctions from radiation damage or interstitial impurities. The revolutionary idea that one could implant group III and V dopants into semiconductors and then heat the implanted substrate to above 800 C didn&psila;t appear until 10 years after Shockley&psila;s 1954 patent. At that time, implantation damage became relatively unimportant as processes evolved with high temperature, long time diffusions. With the advent of rapid thermal processing, the attention shifted back to implantation induced defects to explain transient enhanced diffusion effects. Today&psila;s challenges in forming ultra shallow junctions by ion implantation are in controlling and minimizing the damage structures that dominate junction activation and diffusion. Low energy implants have been effective in this regard

   Keywords:
   channelling;diffusion;doping profiles;impurity distribution;interstitials;ion implantation;p-n junctions;radiation effects;rapid thermal annealing;semiconductor devices;