Publications [#67675] of Richard B. Fair

Papers Published

1. Fair, R.B. and Manda, M.L. and Wortman, J.J., The diffusion of antimony in heavily doped and n- and p-type silicon, J. Mater. Res. (USA), vol. 1 no. 5 , pp. 705 - 11
   (last updated on 2007/04/17)

   Abstract:
   The diffusion of Sb in heavily doped n- and p-type Si has been studied to determine the activation energies and charge states of the point defects responsible for Sb diffusion. It is shown that neutral point defects, probably V^x, dominate under intrinsic doping conditions. For samples doped with high-concentration As or P backgrounds, Sb diffusion is dominated by a double-negatively charged point defect that causes an n² concentration-dependent Sb diffusivity. Electric-field effects are also important. The measured diffusion coefficients are D_i^x=17.5 exp(-4.05 eV/kT), and D_i⁼=0.01 exp(-3.75 eV/kT). The activation energies are consistent with diffusion via V^x and V⁼ vacancies. Retarded diffusion of Sb in p⁺-doped samples with uniform B profiles fits an ion pairing model where Sb⁺B^- pairs form to reduce the flux of Sb atoms

   Keywords:
   antimony;arsenic;diffusion in solids;electromigration;elemental semiconductors;heavily doped semiconductors;phosphorus;silicon;vacancies (crystal);