Publications [#67676] of Richard B. Fair

Papers Published

1. Fair, Richard B., Modeling boron diffusion in ultrathin nitrided oxide p⁺ Si gate technology, IEEE Electron Device Letters, vol. 18 no. 6 (1997), pp. 244 - 247 [55.585342]
   (last updated on 2007/04/17)

   Abstract:
   Based on a network defect model for the diffusion of B in SiO₂, we propose that B diffuses via a peroxy linkage defect (pld) whose concentration in the oxide changes under different processing conditions. We show that as N is added to the gate oxide (nitridation), N atoms compete with B atoms for activation through the diffusion-defect sites. The model predicts that nitridation is ineffective in stopping B penetration when BF₂ implants dope the polysilicon gate, as well as for the case of very thin gate dielectrics with B-implanted gates.

   Keywords:
   MOSFET devices;Silica;Semiconducting boron;Semiconductor doping;Nitrogen;Ion implantation;Semiconductor device models;Ultrathin films;Atoms;Semiconducting films;