Publications [#67677] of Richard B. Fair

Papers Published

1. Fair, R.B. and Pappas, P.N., Diffusion of ion-implanted boron in high concentration P, Sb, and As doped silicon, Electrochemical Society Spring Meeting. (Extended abstracts) (1975), pp. 397 - 9, Toronto, Ont., Canada
   (last updated on 2007/04/17)

   Abstract:
   Data has been obtained by implanting and diffusing B into uniform P and As-doped Si layers. Retarded B diffusion in both P and As-doped Si has been observed, consistent with the theory of a Fermi-level-controlled concentration of donor-type vacancies which directly affect B diffusivity. The significance of this result is that transistor modelling programs must take this first-order effect into account, since the diffusion of B in the presence of n-type dopants is invariably encountered. Examples of numerically calculated B diffusion profiles in n-type Si are presented in which the local diffusivity is determined from the local hole concentration, p. Heavy-doped effects on the Fermi-level calculation are included. These calculations are compared with experimental profiles obtained by SIMS analysis. It is also shown that a well-annealed ion-implanted Sb layer will tend to `getter' ion-implanted B by electron-field-enhanced diffusion of B as well as by solubility enhancement of Sb⁺

   Keywords:
   boron;diffusion in solids;elemental semiconductors;ion implantation;semiconductor doping;silicon;