Publications [#67680] of Richard B. Fair

Papers Published

1. Fair, R.B. and Richards, W., Process simulation of dopant atom diffusion in SiO₂, Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology (1996), pp. 179 - 94, Los Angeles, CA, USA
   (last updated on 2007/04/17)

   Abstract:
   A network defect model suitable for use in process simulation is presented for the diffusion of Group III and V atoms in SiO₂ and, in particular, B in the presence of F and H₂. We find that atomic diffusion of network formers occurs via a peroxy linkage defect whose concentration in the oxide changes under different processing conditions. From random walk theory, it is then possible to calculate the resulting diffusion coefficients. These results are compared with measured diffusivities and empirical adjustments are made. Simulations of B diffusion were performed using the Athena and ZOMBIE simulators. A shell script interface was written to pre-process the Athena input file and modify the appropriate coefficients

   Keywords:
   annealing;boron;dielectric thin films;diffusion;doping profiles;semiconductor process modelling;silicon compounds;software tools;