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| Publications [#67692] of Richard B. Fair
Papers Published
- Fair, Richard B. and Pappas, Paul N., GETTERING OF BORON BY AN ION-IMPLANTED ANTIMONY LAYER IN SILICON.,
Solid-State Electronics, vol. 18 no. 12
(1975),
pp. 1131 - 1134 [0038-1101(75)90179-3]
(last updated on 2007/04/17)
Abstract: Secondary ion mass spectrometry has been employed to reveal the gettering of implanted B by an annealed, implanted Sb layer. It is shown that the gettering of B is significant, and may be caused by electric-field-enhanced diffusion of the B as well as by solubility enhancement of the electrically-active Sb. These results emphasize the first-order importance of cooperative effects between donors and acceptors in diffusion profile calculations.
Keywords: BORON;
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