Publications [#67695] of Richard B. Fair

Papers Published

1. Fair, Richard B., Role of transient damage annealing in shallow junction formation, Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. B37-38 no. 1-2 (1989), pp. 371 - 378, Kyoto, Jpn [0168-583X(89)90206-1]
   (last updated on 2007/04/17)

   Abstract:
   Damage introduced into the Si substrate by ion-implantation can have a profound effect on the diffusion of dopants during rapid thermal annealing (RTA) or low temperature furnace annealing. In this paper defect production models are discussed for three cases: 1) low dose B⁺ implants, 2) B⁺ implants into preamorphized Si, and 3) BF₂⁺, As⁺ and P⁺ self-amorphizing implants. Enhanced diffusion transients of dopants are related to the annealing of point-defect clusters, end-of-range dislocations and projected range misfit dislocations: Diffusion activation energies are reduced by the formation enthalpies of point defects generated by the annealing of implantation-induced damage.

   Keywords:
   Boron - Diffusion;Heat Treatment - Annealing;Radiation Damage;