Publications [#67697] of Richard B. Fair

Papers Published

1. Ajmera, A.C. and Rozgonyi, G.A. and Fair, R.B., Point defect/dopant diffusion considerations following preamorphization of silicon via Si⁺ and Ge⁺ implantation, Appl. Phys. Lett. (USA), vol. 52 no. 10 (1988), pp. 813 - 15 [1.99292]
   (last updated on 2007/04/17)

   Abstract:
   A comparison has been made between two shallow preamorphization techniques using Si⁺ and Ge⁺ implantation, followed by B⁺ implantation and rapid thermal annealing (RTA). The subsequent impact on boron diffusion profiles and extended defects have been examined experimentally with secondary ion mass spectroscopy and cross-section transmission electron microscopy, and theoretically with the PREDICT computer program, in an attempt to generalize the observations. Enhanced or retarded B diffusion during RTA has been correlated with the relative depths of the original amorphous/crystalline interface and the as-implanted B profiles, with ion type used for preamorphization, and with the initial type and relative location of the radiation-induced point defects. In general, Si⁺ self-implant samples showed less B profile broadening than Ge⁺ implant samples following RTA at 1050°C for 10 s. The conditions necessary for complete annihilation of end-of-range interstitial loops for Si⁺ self-amorphization are specified

   Keywords:
   amorphisation;annealing;boron;diffusion in solids;elemental semiconductors;interstitials;ion implantation;point defects;secondary ion mass spectra;silicon;transmission electron microscope examination of materials;