Publications [#67707] of Richard B. Fair

Papers Published

1. Fair, R.B., Boron diffusion in silicon-concentration and orientation dependence, background effects, and profile estimation, J. Electrochem. Soc. (USA), vol. 122 no. 6 (1975), pp. 800 - 5
   (last updated on 2007/04/17)

   Abstract:
   Anomalous effects that have been observed include a concentration-dependent diffusion coefficient, orientation-dependent diffusion under oxidizing conditions, and retarded or accelerated diffusion in the presence of n-type impurities. The author discusses a model of B diffusion which can be used to explain these observed effects. Data and arguments are presented which show that B diffuses via a monovacancy mechanism when the diffusion is performed in a nonoxidizing ambient. A donor-type vacancy is responsible which has a presumed energy level of ~E_v+0.37 eV as suggested from the quenching experiments of Elstner and Kamprath (1967) High concentration (⟩2×10¹⁹ cm^-3) B diffusions into Si over a 550°C temperature range in neutral ambients result in profile data that fit a normalized universal curve which is a polynomial approximation to the solution of the diffusion equation with concentration-dependent diffusivity. From this result, useful curves of surface concentration vs. resistivity and junction depth are presented

   Keywords:
   boron;diffusion in solids;elemental semiconductors;semiconductor doping;silicon;