Publications [#67709] of Richard B. Fair

Papers Published

1. Fair, Richard B. and Tsai, Joseph C. C., DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON., Journal of the Electrochemical Society, vol. 122 no. 12 (1975), pp. 1689 - 1696
   (last updated on 2007/04/17)

   Abstract:
   In order to characterize implanted-diffused As layers in Si and to develop general processing information, impurity profiles were determined by secondary ion mass spectrometry (SIMS) and differential conductivity measurements. An analysis of these profiles is given which has yielded information regarding the diffusion of As and the electrical quality of these implanted-diffused layers. It is shown that implanted-diffused As profiles with C//T//O greater than equivalent to 1 multiplied by 10**2**0 cm** minus **3 can be described by a Chebyshev polynomial approximation to the diffusion equation with concentration-dependent diffusivity. The diffusion of As is not dependent upon the furnace ambient, but As pile-up within 200-400A of the Si surface does occur during diffusion in an oxidizing atmosphere.

   Keywords:
   ARSENIC - Diffusion;