Publications [#67719] of Richard B. Fair

Papers Published

1. Fair, R.B., Modeling of dopant diffusion and associated effects in silicon, Defects in Semiconductors II, Symposium Proceedings (1983), pp. 61 - 74, Boston, MA, USA
   (last updated on 2007/04/17)

   Abstract:
   Research in the area of dopant diffusion in Si has focused on identifying the specific mechanisms and point defects involved. Recent approaches include observing the effects of diffusion and doping on oxygen precipitation, stacking fault growth or shrinkage, enhanced/retarded diffusion of one dopant in the presence of another. Very few of these studies have yielded unambiguous interpretations as a result of the indirect nature of the experiments. However, taken together one can infer the relative importance of vacancies versus Si self-interstitials in the diffusion of each dopant species

   Keywords:
   diffusion in solids;elemental semiconductors;interstitials;precipitation;silicon;stacking faults;vacancies (crystal);