Publications [#67732] of Richard B. Fair

Papers Published

1. Fair, R.B. and Weber, G.R., Effects of complex formation on diffusion of arsenic in silicon, J. Appl. Phys. (USA), vol. 44 no. 1 (1973), pp. 273 - 9
   (last updated on 2007/04/17)

   Abstract:
   When As diffuses into Si, only a fraction of the As remains electrically active. Because of the importance of As as an emitter dopant, it is necessary to understand the nature of the inactive As and how it affects the solubility and diffusion of As⁺ ions. A model is proposed in which As⁺ diffuses via a simple vacancy mechanism while in quasiequilibrium with [V_SiAs₂] complexes. The flux of mobile monatomic As⁺ is modified according to the extent of [V_SiAs₂] complex formation. The structure of this defect and its formation energy (≈1.8 eV) are discussed. An effective diffusion coefficient is derived using this model: D_As=2D_iC_A/(1+8K'₂C_A³) where C_A is the As⁺ concentration and K'₂ is a collective parameter that depends upon As⁺ surface concentration and the diffusion temperature. Experimental verification of the correctness of this equation is given

   Keywords:
   arsenic;diffusion in solids;silicon;