Publications [#67745] of Richard B. Fair

Papers Published

1. Morehead, F.F. and Fair, R.B., Comment on `The diffusion of antimony in heavily doped and (sic) n- and p-type silicon' [J. Mater. Res. 1, 705 (1986)], J. Mater. Res. (USA), vol. 2 no. 4 (1987), pp. 538 - 41
   (last updated on 2007/04/17)

   Abstract:
   R.B. Fair et al. have analyzed original data on the effect of heavy, uniform background doping with As and B on the diffusivity of Sb in Si at 1000°-1200°C. Their analysis attributed a role to `electric fields' and led to the conclusion that, for n-type background doping, Sb diffusion is dominated by double-negatively charged vacancies with no contribution from V^-. For p-type backgrounds they concluded that donor-acceptor pairing alone retards the diffusion. Morehead shows (1) that electric fields do not play a role in their experiments, (2) that the contribution of V^- to Sb diffusion in an n-type background is not zero but is roughly equal to that of V^2- for n/n_i=10, and (3) that the retardation of Sb diffusion in p-type Si is due both to donor-acceptor pairing and, principally, to the elimination of the contributions of V^- and V^2-

   Keywords:
   antimony;arsenic;boron;diffusion in solids;elemental semiconductors;heavily doped semiconductors;impurity-vacancy interactions;silicon;