Publications [#67755] of Richard B. Fair

Papers Published

1. Fair, R. B. and Wortman, J. J. and Liu, J., MODELING RAPID THERMAL DIFFUSION OF ARSENIC AND BORON IN SILICON., Journal of the Electrochemical Society, vol. 131 no. 10 (1984), pp. 2387 - 2394
   (last updated on 2007/04/17)

   Abstract:
   Rapid thermal annealing (RTA) of high dose B and As implants is believed to produce large transients of point defects that may exist for the duration of the anneal (2-30s). Enhanced diffusion during RTA of boron implants greater than 10**1**5 cm** minus **2 is related to damage clusters at the peak of the range which can grow into cross-grid dislocation networks. This process can create point defects through dislocation-dislocation reactions and by nonconservative climb processes. Enhanced diffusion during RTA of high dose As implants greater than 2 multiplied by 10**1**4 cm** minus **2 is related to the amorphous Si surface layer formed during implantation. Regrowth of this layer into a defect-free, crystalline layer is assumed to produce point defects which remain behind until they diffuse away. In the meantime, they contribute to enhanced As diffusion during the first 5-10s of the RTA cycle.

   Keywords:
   BORON;SILICON AND ALLOYS;