Publications [#67757] of Richard B. Fair

Papers Published

1. Fair, R.B., Modeling of dopant diffusion during rapid thermal annealing, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 4 no. 3 (1986), pp. 926 - 32, Houston, TX, USA [1.573758]
   (last updated on 2007/04/17)

   Abstract:
   Observations of enhanced dopant diffusion during rapid thermal annealing (RTA) have been made and correlated with the existence of the following phenomena: (1) amorphization of the ion implanted layer; (2) damage-induced dislocation formation; (3) damage annealing; (4) self-interstitial trapping; or (5) dopant solubility enhancement. Thus, modeling the diffusion of As, B, P, and Sb during RTA presents a unique challenge, since point-defect generation, damage annealing, and solid solubility levels are occurring or changing during the short diffusion intervals. The base line modeling environment for studying transient diffusion must include normal, thermally assisted diffusion processes such as electric field effects, concentration-dependent diffusion, clustering or precipitation, dopant misfit strain, etc. In addition, transient phenomena must be introduced. The author has handled transient modeling by overlaying the time-dependent effects on steady-state thermally assisted diffusion calculations. Temperature and point-defect transients are calculated by performing calculations over small time intervals in which average parameter values are determined. Calculations and measurements have been performed as As, P, B, and BF₂ implants into crystalline and preamorphized Si. Atomic level models are proposed and activation energies have been determined for each substrate-dopant combination

   Keywords:
   annealing;antimony;arsenic;boron;boron compounds;diffusion in solids;elemental semiconductors;impurities;ion implantation;phosphorus;silicon;