Publications [#67764] of Richard B. Fair

Papers Published

1. Fair, R.B. and Wivell, H.W., Zener and avalanche breakdown in As-implanted, low-voltage Si n-p junctions, 1975 International Electron Devices Meeting. (Technical digest) (1975), pp. 455 - 8, Washington, DC, USA
   (last updated on 2007/04/17)

   Abstract:
   Implanted-diffused As layers in Si have been well-characterized, and have been used in fabricating low-voltage n-p junctions. It is shown that these As layers form linearly-graded junctions with a uniform B-doped background (ρ≃.006 Ω-cm). Further, the grade constant of the As profile at the junction is known sufficiently well as a function of As dose, diffusion time and temperature to allow quantitative use of existing tunneling and avalanche theories for the calculation of the reverse I-V curves. Calculated curves are presented which correlate As implant dose and diffusion with junction breakdown voltage, breakdown impedance and temperature coefficient of reverse voltage

   Keywords:
   electron avalanches;elemental semiconductors;p-n homojunctions;silicon;tunnelling;Zener effect;