Publications [#67768] of Richard B. Fair

Papers Published

1. Fair, R.B. and Wortman, J.J. and Liu, J., Modeling rapid thermal annealing processes for shallow junction formation in silicon, International Electron Devices Meeting 1983. Technical Digest (1983), pp. 658 - 61, Washington, DC, USA
   (last updated on 2007/04/17)

   Abstract:
   Computer modeling of impurity diffusion during rapid thermal annealing (RTA) in a halogen lamp system has been performed. Large, transient concentrations of point defects are generated during the annealing of implantation damage. The duration of the transients are comparable with the times used in RTA. The result is enhanced diffusion of the implanted species. The enhanced diffusion depends on the damage annealing which itself depends on implant dose and energy as well as on temperature. Successful modeling of B and As during RTA has been achieved over wide dose ranges but over limited energy ranges

   Keywords:
   annealing;arsenic;boron;digital simulation;elemental semiconductors;ion implantation;semiconductor technology;silicon;