Publications [#66356] of Nan M. Jokerst

Papers Published

1. Carl Chun and Vendier, O. and Moon, E. and Lakar, J. and Hyeon Cheol Ki and Jokerst, N.M. and Brooke, M., Intergrated 1.55 μm receivers using GaAs MMICs and thin film InP detectors, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192), vol. vol.1 (1998), pp. 47 - 50, Baltimore, MD, USA [MWSYM.1998.689321]
   (last updated on 2007/04/16)

   Abstract:
   A GaAs-based amplifier has been designed and integrated with a large area, high efficiency, thin film InP-based metal-semiconductor-metal photodetector. Thin film integration is a hybrid integration scheme that minimizes the parasitics between the InP detector and the GaAs circuit to the order of integrated circuits. The GaAs integrated circuits are fabricated using a commercial TriQuint Semiconductor foundry process, demonstrating the use of standard GaAs-based foundry circuits for long wavelength, highly integrated, high speed, low cost photoreceivers. Utilizing thin film integration to minimize interconnect parasitics, a 1.55 μm wavelength receiver has been demonstrated at 1 GB/s, and initial results for a 10 GB/s receiver under fabrication are presented

   Keywords:
   gallium arsenide;hybrid integrated circuits;indium compounds;integrated optoelectronics;metal-semiconductor-metal structures;MMIC amplifiers;optical receivers;photodetectors;thin film circuits;