Publications [#66440] of Nan M. Jokerst

Papers Published

1. Calhoun, Kenneth H. and Jokerst, N.M., Determination of Franz-Keldysh electrorefraction near the GaAs absorption edge using epitaxial liftoff thin film semiconductor etalons, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting (1993), pp. 339 - 340, San jose, CA, USA [LEOS.1993.379198]
   (last updated on 2007/04/16)

   Abstract:
   We report the first direct measurement of near-band edge (within several meV) Franz-Keldysh electrorefraction in GaAs using thin film, P-i-N double heterostructures and MSM structures fabricated using epitaxial liftoff processing. Thin metallic films are applied to the top and bottom surfaces of the devices and are used as both electrical contacts and mirrors.

   Keywords:
   Semiconductor devices;Thin films;Light absorption;Refractive index;Semiconducting gallium arsenide;Electric field effects;