Publications [#67577] of Richard B. Fair

Papers Published

1. Fair, R.B., Impurity diffusion during RTA, Energy Beam-Solid Interactions and Transient Thermal Processing/1984 Symposium (1985), pp. 381 - 92, Boston, MA, USA
   (last updated on 2007/04/17)

   Abstract:
   Enhanced dopant diffusion during RTA depends upon whether the following physical phenomena occur individually or in combination: (1) amorphization of the Si, (2) damage-induced dislocation formation, (3) damage annealing, (4) self-interstitial trapping, (5) solubility enhancement. RTA of B in crystalline or preamorphized Si presents significantly different environments for enhanced diffusion. In preamorphized Si, enhanced B diffusion is modeled as increased B solubility following SPE. In addition, a different intrinsic diffusivity is observed which corresponds to B diffusion in preamorphized Si. Anomalous diffusion of P and As from high dose implants can be modeled with the same mechanism-self-interstitial trapping following SPE

   Keywords:
   amorphisation;annealing;boron;diffusion in solids;dislocations;elemental semiconductors;interstitials;semiconductor doping;silicon;solid solubility;