Publications [#67589] of Richard B. Fair

Papers Published

1. Fair, Richard B., COOPERATIVE EFFECTS BETWEEN ARSENIC AND BORON IN SILICON DURING SIMULTANEOUS DIFFUSIONS FROM ION IMPLANTED AND CHEMICAL SOURCE PREDEPOSITIONS., Solid-State Electronics, vol. 17 no. 1 (1974), pp. 17 - 24 [0038-1101(74)90108-7]
   (last updated on 2007/04/17)

   Abstract:
   This paper demonstrates that simultaneous diffusions of As and B from predeposited layers (in particular, ion-implanted layers) can represent a situation in which cooperative diffusion effects between As and B are negligible, i. e. , the retarded base phenomenon is not observed. Transistor doping profiles were experimentally measured and compared with calculated profiles that were solutions to the coupled As-B diffusion equations. By including the cooperative effects in these equations it was possible to determine the importance of these interactions and how significantly the B base profile can be affected by them. A discussion of As-complex formation and the electrical quality of As implanted-annealed layers is subsequently presented.

   Keywords:
   SEMICONDUCTING SILICON - Doping;