Publications [#67590] of Richard B. Fair

Papers Published

1. Fair, R.B. and Tsai, J.C.C., The diffusion of ion-implanted arsenic in silicon, Electrochemical Society Fall Meeting (Extended abstracts only received) (1975), pp. 464 - 6, Dallas, TX, USA
   (last updated on 2007/04/17)

   Abstract:
   Secondary ion mass spectrometry and differential conductivity measurements have been used to study implanted-diffused As layers in Si. Analysis of the experimental results has resulted in a simple analytical description of profile shapes for surface concentrations greater than 10²⁰ cm^-3, a resistivity vs. electron concentration curve for As-doped Si up to n=5×10²⁰ cm^-3, and information regarding the diffusivity and electrical activity of implanted As in various diffusion ambients

   Keywords:
   arsenic;diffusion in solids;electrical conductivity of solid semiconductors and insulators;electron density;elemental semiconductors;impurity electron states and effects;ion implantation;mass spectroscopic chemical analysis;semiconductor doping;silicon;