Publications [#67594] of Richard B. Fair

Papers Published

1. Fair, Richard B., Junction formation in silicon by rapid thermal annealing, Materials Research Society Symposium Proceedings, vol. 300 (1993), pp. 545 - 558, San Francisco, CA, USA
   (last updated on 2007/04/17)

   Abstract:
   The feasibility of using isothermal RTA in annealing ion implanted layers for forming junctions has been investigated for the past 10 years. While many of the scientific details surrounding defect formation, transient diffusion and dopant activation remain to be clarified, RTA intrinsically is a viable annealing process which is essential for fabricating advanced silicon devices.

   Keywords:
   Semiconducting silicon;Annealing;Ion implantation;Semiconducting films;Crystal defects;Diffusion in solids;Semiconductor doping;Semiconductor device manufacture;Thermal effects;