Publications [#67598] of Richard B. Fair

Papers Published

1. Fair, R. B. and Subrahmanyan, R., PREDICT - A NEW DESIGN TOOL FOR SHALLOW JUNCTION PROCESSES., Proceedings of SPIE - The International Society for Optical Engineering, vol. 530 (1985), pp. 88 - 96, Los Angeles, CA, USA
   (last updated on 2007/04/17)

   Abstract:
   A new one-dimensional Process Estimator for the Design of IC Technologies (PREDICT) has been developed which rigorously solves coupled equations describing dopant behavior under modern processing conditions. All of the models in PREDICT have been verified by experimental measurements. Such models include a new ion implantation algorithm with empirical parameters to describe the exponential tail formed through ion channeling, rapid thermal diffusion of B, As and P, accurate oxidation calculations including the effects of pressure, HCl and doping concentrations, effects of stress and dopant precipitation and clustering, ion pairing, implantation through deposited or grown films (oxide, polysilicon, nitride), concentration effects, etc. PREDICT has been used to simulate high dose B and BF//2 implants/diffusions in both LT AN BR 100 RT AN BR and LT AN BR 111 RT AN BR Si. Considerations in these calculations include channeling during implantation, the effects of pre-amorphization, damage-induced dislocation networks and the enhanced diffusion of B outside of these networks, and precipitation of B using a 12 atom cluster model.

   Keywords:
   SEMICONDUCTOR DEVICES - Junctions;SEMICONDUCTING SILICON;