Publications [#67599] of Richard B. Fair

Papers Published

1. Fair, R.B., Optimum low-level injection efficiency of silicon transistors with shallow arsenic emitters, IEEE Trans. Electron Devices (USA), vol. ED20 no. 7 (1973), pp. 642 - 7
   (last updated on 2007/04/17)

   Abstract:
   The influence of As surface concentration C_SE on the emitter efficiency β_γ and the temperature dependence of β_γ are reported. The theoretical model that is used to explain the variation of β_γ with C_SE is based upon the difference in the effective energy bandgaps in the emitter and base regions ΔE_g. Experimental measurements of ΔE_g versus C_SE are presented. Measurements of β_γ versus C_SE show that the effective emitter doping density Q_E/x_eb reaches a maximum value at C_SE≅1.5×10²⁰ atoms/cm³, corresponding to the threshold above which ΔE_g>0. For the case of a constant active base doping/cm²Q_B, this also corresponds to an optimum in the emitter efficiency β_γ. However, it is shown that in typical sequential diffusion processing of transistors, β_γ increases monotonically with C_SE because Q_B=Q_B(C_SE) decreases

   Keywords:
   bipolar transistors;silicon;