Publications [#67614] of Richard B. Fair

Papers Published

1. Fair, R.B., Quantified conditions for emitter-misfit dislocation formation in silicon, J. Electrochem. Soc. (USA), vol. 125 no. 6 (1978), pp. 923 - 6
   (last updated on 2007/04/17)

   Abstract:
   The conditions under which misfit dislocations are generated during phosphorus diffusion in silicon are discussed. Van der Merwe's concept of critical misfit is used to determine the critical surface region depth for a given P surface concentration which causes spontaneous misfit dislocation formation. Using this model the times required to form misfit arrays are calculated as a function of temperature and surface concentration. The effect of misfit dislocation generation in an oxidising ambient is also discussed

   Keywords:
   diffusion in solids;dislocation arrays;elemental semiconductors;phosphorus;semiconductor doping;silicon;