Publications [#67625] of Richard B. Fair

Papers Published

1. Fair, R.B. and Pappas, P.N., Diffusion of ion-implanted B in high concentration P- and As-doped silicon, J. Electrochem. Soc. (USA), vol. 122 no. 9 , pp. 1241 - 4
   (last updated on 2007/04/17)

   Abstract:
   The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As has been studied by correlating numerical profile calculations with profiles determined by secondary-ion mass spectrometry, (SIMS). Retarded B diffusion is observed in both As- and P-doped Si, consistent with the effect of the local Fermi-level position in the Si bandgap on B diffusivity, D_B. It is shown that D_b is linearly dependent on the free hole concentration, p, over the range 0.1<p/n_ie<30, where n_ie is the effective intrinsic electron concentration. This result does not depend on the way in which the background dopant has been introduced (implantation predeposition or doped-oxide source), nor the type of dopant used (P or As)

   Keywords:
   arsenic;boron;carrier density;diffusion in solids;elemental semiconductors;ion implantation;phosphorus;semiconductor doping;silicon;